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ENDRICH

Power MOSFETs

Transistors

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Features :

  • Lower internal resistance due to new bonding method at highcurrent SMD types
  • Controlled avalanche-effekt due to optimised profile
  • Manufactured of the patented CSM (Contact Shift Margin) structure type
  • A wide range of Power-MOSFETs up to 1500V Lower internal resistance due to new bonding method at high-current SMD types

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    See also

    Adapters Displays Switches EMC-components Capacitors Diodes Coils Wire, Cables, Cords

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