Photodiodes and Phototransistors

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Presentation

Silicon photodiodes and phototransistors can detect radiation ranging between 400nm and 1,100nm. Since the maximum sensitivity is approx. 880nm, infrared radiation is particulary well detected by silicon components. Photodiodes and phototransistors are available with black epoxy resin mold, which suppresses the sensitivity within the visible spectral area. For slow optical switching applications, phototransistors are generally used, wherby photodiodes are used for measuring applications or data transmission.

Features

Available as SMD or with pins

Reception direction upwards, downwards, sideways

Sensitivity angle: +/-20? … +/-80?

With or without daylight filter

Phototransistors are also available with two chips

Large area solderable photodiode chips or photodiode arrays for special sensor applications are available